NTE377 (NPN) & NTE378 (PNP) Silicon Complementary Transistors Power Amp Driver, Output, Switch
Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A D Fast Switching Speeds D Complementary Pairs Simplifies Designs Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Thermal Resistance, Junction-to-Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +275C Note 1. Pulse Width 6ms, Duty Cycle 50%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain hFE VCE(sat) VBE(sat) Ccb VCE = 1V, IC = 2A, TJ = +25C VCE = 1V, IC = 4A, TJ = +25C Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Collector Capacitance NTE377 NTE378 Gain Bandwidth Product NTE377 NTE378 Switching Times Delay and Rise Time NTE377 NTE378 Storage Time Fall Time NTE377 NTE378 ts tf IC = 5A, IB1 = IB2 = 500mA td + tr IC = 5A, IB1 = 500mA - - - - - 300 135 500 140 100 - - - - - ns ns ns ns ns fT IC = 500mA, VCE = 10V, f = 20MHz VCB = 10V, ftest = 1MHz - - - - 130 230 50 40 - - - - pF pF MHz MHz IC = 8A, IB = 400mA IC = 8A, Ib = 800mA 60 40 - - - - - - - - 1.0 1.5 V V ICES IEBO VCE = 80V, VBE = 0 VEB = 5V - - - - 10 100 A A Symbol Test Conditions Min Typ Max Unit
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab
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